Institutions
Found 216 articles associated to the institution National Institute for Materials Science.
 
Atomic switches: Ionic computing
25-March-2011

A critical review of the current status and future prospects of new computing architectures based on ‘atomic switches’ fabricated by controlling the movement of cationic ions during solid electrochemical reactions.

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Flexible high-performance carbon nanotube integrated circuits
25-February-2011

New Energy and Industrial Technology Development Organization (NEDO), Nagoya University in Japan and Aalto University in Finland jointly announced on February 7, 2011 that researchers of the two universities succeeded to make high-performance carbon nanotube (CNT) integrated circuits on flexible plastic substrate.

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Segregation Behaviors and Radial Distribution of Dopant Atoms in Silicon Nanowires
25-February-2011

National Institute for Material Science, Japan Science and Technology Agency and University of Tsukuba announced on February 4, 2011 that they succeeded in detecting nondestructively dynamic behaviors of doped impurities in Si nanowires (Si NWs) coated by SiO2 to make surrounding gate field-effect transistors.

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Advantages of the Scanning Low Energy Electron Microscopy (SLEEM) method
25-February-2011

A specific way of visualizing specimen surfaces at high sensitivity is to use a cathode lens (CL) mode in the SEM. The CL is a zero working distance electrostatic lens with the negatively biased specimen serving as the cathode and the earthed scintillator of the detector as the anode of the CL.

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Observation of Half-Quantum Magnetic Flux in Sr2RuO4
25-February-2011

Kyoto University and University of Illinois announced on 14th January 2011 that they have succeeded in observing half-height magnetization steps in strontium ruthenium oxide (Sr2RuO4).

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