Found 94 articles associated to the institution National Institute for Materials Science.
A Novel Energy-Band Model for Semiconducting Spintronics Material Gallium Manganese Arsenide28-March-2011
The Fermi level position and band structure of gallium manganese arsenide has been determined for the first time, shedding light on the precise mechanism behind ferromagnetism in the material.
A Versatile High-Sensitivity Surface Stress Membrane Sensor28-March-2011
An international team of researchers have developed a versatile and high-sensitivity sensor for detecting analytes ranging from gaseous to biological molecules.
Zinc stannate nanostructures: growing a highly useful semiconductor24-March-2011
This timely review focuses on the synthesis of zinc stannate (zinc tin oxide: ZTO) nanostructures by the hydrothermal method, as well as the physical properties and applications of different zinc stannate nanostructures in solar cells, gas sensors, and photocatalysts.
Atomic switches: Ionic computing24-March-2011
A critical review of the current status and future prospects of new computing architectures based on ‘atomic switches’ fabricated by controlling the movement of cationic ions during solid electrochemical reactions.
Flexible high-performance carbon nanotube integrated circuits25-February-2011
New Energy and Industrial Technology Development Organization (NEDO), Nagoya University in Japan and Aalto University in Finland jointly announced on February 7, 2011 that researchers of the two universities succeeded to make high-performance carbon nanotube (CNT) integrated circuits on flexible plastic substrate.
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